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| SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions Values Units Inverse diode SEMITRANSTM M1 Power MOSFET Modules SKM 180A020 Characteristics Symbol Conditions min. typ. max. Units Features Inverse diode Typical Applications Thermal characteristics Mechanical data MA 1 03-12-2008 NOS (c) by SEMIKRON SKM 180A020 MOSFET,TRANSISTOR Fig. 1 Rated power disipation vs. temperature Fig. 2 Maximum safe operating area Fig. 3 Output characteristic Fig. 4 Transfer characteristic Fig. 5 On-resistance vs. temperature Fig. 6 Rated current vs. temperature 2 03-12-2008 NOS (c) by SEMIKRON SKM 180A020 MOSFET,TRANSISTOR Fig. 7 Breakdown voltage vs. temperature Fig. 8 Drain-source voltage derating Fig. 9 Capacitances vs. drain-source voltage Fig. 10 Gate charge characteristic Fig. 14 Gate-source threshold voltage 3 03-12-2008 NOS (c) by SEMIKRON SKM 180A020 MOSFET,TRANSISTOR UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 03-12-2008 NOS (c) by SEMIKRON |
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